EL SEGUNDO, Calif .– (COMMERCIAL THREAD) – Idle power consumption and overall efficiency were the main concerns of Innosonix GmBH when designing its latest high-end multi-channel power amplifier in the Maxx series. By switching from traditional silicon FETs to EPC’s EPC2059 eGaN FET, the company reduced idle losses by 35% and lowered activation resistance to increase total energy efficiency by 5%.
The EPC2059 is a 6.8mΩ, 170V Gallium Nitride (eGaN) Enrichment Mode Transistor providing superior audio performance for high-end amplifier applications. The low on-resistance and low capacitance of the EPC2059 enables high efficiency and lowers open-loop impedance for low transient intermodulation distortion (T-IMD). Fast switching capability and zero reverse recovery load enable higher output linearity and low cross-distortion for lower total harmonic distortion (THD).
By using the EPC2059 eGaN FET, innosonix was able to reduce the switching loss at rest because the total gate load was almost halved. The output capacity only doubled to triple the maximum drain voltage, allowing Innosonix to go from a full bridge design to a half bridge design, which also reduced the cost of number of components. The low inductance of the housing results in a clean switching waveform which leads to an almost perfect switching voltage and hence better linearity. This resulted in a reduction in harmonic distortion of nearly 6dB and the subjective audio quality audibly improved, to the benefit of customers.
MAxx multi-channel power amplifiers set an unprecedented standard for high-end audio installations in residential, scientific, industrial and many other applications requiring a high number of channels. Combined with low energy consumption per channel, the MAxx series perfectly meets the demands of the modern world to reduce CO emissions.2 since many devices operate 24 hours a day, seven days a week.
The MAxx series will offer the highest number of channels per rack space in a single unit. This high density package offers a whole new design perspective not possible with conventional solutions.
“We are delighted to be working with EPC. As a small business, it is not always easy to do business with some large semiconductor manufacturers and be taken seriously. We chose the EPC2059 eGaN FET because it perfectly matches the current, voltage and price requirements of innosonix and its small form factor is an impressive feature for high density circuit design, ”commented Markus Bätz, CEO of innosonix.
Wolfram Krüger, VP Sales Europe of EPC added: “This application is a great example of the real benefits that GaN brings and, together with our distribution partner FinePower, we have worked closely with innosonix to find the best eGaN FET to meet the design challenges that the Maxx power amplifier brings.
About the EPC
EPC is the leader in gallium nitride in enhancement mode (eGaN®) based on power management. EGaN FETs and ICs deliver performance that is many times better than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing (lidar) technology, motors for eMobility, robotics and drones , and low cost satellites.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
The specialist for multi-channel audio amplifiers, made in Germany. The first choice when it comes to high quality sound for residential / marina or research and technical acoustics installations where a large number of channels in small spaces is required.